名称: | |
描述: | |
公开/私有: | 公开 私有 |
Growth and characterization of Ga2O3-based wide bandgap semiconductor films / |
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ISBN/ISSN:
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9787568059039 |
中图分类法
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TN304.055 |
著者:
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Zhang, Fabi (张法碧), |
题名:
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Growth and characterization of Ga2O3-based wide bandgap semiconductor films / |
其它题名:
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基于氧化镓的超宽禁带半导体薄膜生长与表征 |
载体形态:
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iv, 158 pages : illustrations ; 24 cm |
主题词:
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Semiconductor films. |
标签:
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相关主题:
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分享资源:
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HEA| |01185nam a2200265 i 4500 001| |022020000431 003| |CAL 005| |20200914105158.5 008| |200914s2020 cc a b 000 0 eng d 020| |▼a9787568059039▼qpaperback 040| |▼aSCT▼beng▼cSCT▼erda▼dSCT 093| |▼aTN304.055▼25 099| |▼aCAL 022020218446 100|1 |▼aZhang, Fabi▼9(张法碧),▼eauthor. 245|10|▼aGrowth and characterization - | |of Ga2O3-based wide bandgap se- | |miconductor films /▼cFabi Zhang著. 246|1 |▼iParallel title in Chinese fr- | |om CIP:▼a基于氧化镓的超宽禁带半导体薄膜生长与表征- 264| 1|▼a武汉 :▼b华中科技大学出版社,▼c2020. 300| |▼aiv, 158 pages :▼billustratio- | |ns ;▼c24 cm 336| |▼atext▼btxt▼2rdacontent 337| |▼aunmediated▼bn▼2rdamedia 338| |▼avolume▼bnc▼2rdacarrier 504| |▼aIncludes bibliographical references. 505|0 |▼aIntroduction -- Film growth - | |and characterization methods -- | |- Growth and characterization - | |of Ga2O3 films -- Effect of Si- | | doping properties of Ga2O3 fi- | |lms -- Growth and characteriza- | |tion of (Ga1-xInx)2O3 films --- | | Growth and characterization o- | |f (AlGa)2O3 films. 650| 0|▼aSemiconductor films. 998| |▼aSCT