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保存至书单:
Nanoscale MOS transistors : semi-classical transport and applications / |
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ISBN/ISSN:
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9780521516846 (hardback) |
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中图分类法
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TN386.1 |
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著者:
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Esseni, D. |
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题名:
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Nanoscale MOS transistors [semi-classical transport and applications ] |
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出版发行:
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Cambridge ; : Cambridge University Press, 2011. |
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载体形态:
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xvii, 470 p. : ill. ; 26 cm. |
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主题词:
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Metal oxide semiconductors Design and construction. |
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主题词:
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Electron transport. |
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主题词:
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Nanoelectronics. |
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主要责任者:
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Palestri, P. (Pierpaolo) |
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主要责任者:
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Selmi, L. (Luca) |
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HEA| |01952cam a2200337 a 4500 001| |022011001083 003| |CAL 005| |20110926111200.1 008| |101207s2011 enka b 001 0 eng 010| |▼a 2010046886 020| |▼a9780521516846 (hardback) 040| |▼aDLC▼cDLC▼dDLC 042| |▼apcc 050|00|▼aTK7871.99.M44▼bE76 2011 082|00|▼a004.5/3▼222 084| |▼aTEC008080▼2bisacsh 093| |▼aTN386.1▼25 099| |▼aCAL 022011295108 100|1 |▼aEsseni, D.▼q(David) 245|10|▼aNanoscale MOS transistors :▼- | |bsemi-classical transport and - | |applications /▼cDavid Esseni, - | |Pierpaolo Palestri, Luca Selmi. 260| |▼aCambridge ;▼aNew York :▼bCam- | |bridge University Press,▼c2011. 300| |▼axvii, 470 p. :▼bill. ;▼c26 cm. 504| |▼aIncludes bibliographical ref- | |erences and index. 505|8 |▼aMachine generated contents n- | |ote: 1. Introduction; 2. Bulk - | |semiconductors and the semi-cl- | |assical model; 3. Quantum conf- | |ined inversion layers; 4. Carr- | |ier scattering in silicon MOS - | |transistors; 5. The Boltzmann - | |transport equation; 6. The Mon- | |te Carlo method for the Boltzm- | |ann transport equation; 7. Sim- | |ulation of bulk and SOI silico- | |n MOSFETs; 8. MOS transistors - | |with arbitrary crystal orienta- | |tion; 9. MOS transistors with - | |strained silicon channels; 10.- | | MOS transistors with alternat- | |ive materials; Appendix A. Mat- | |hematical definitions and prop- | |erties; Appendix B. Integrals - | |and transformations over a fin- | |ite area A; Appendix C. Calcul- | |ation of the equi-energy lines- | | with the k-p model; Appendix - | |D. Matrix elements beyond the - | |envelope function approximatio- | |n; Appendix E. Charge density - | |produced by a perturbation potential. 650| 0|▼aMetal oxide semiconductors▼x- | |Design and construction. 650| 0|▼aElectron transport. 650| 0|▼aNanoelectronics. 700|1 |▼aPalestri, P.▼q(Pierpaolo) 700|1 |▼aSelmi, L.▼q(Luca) 856|42|▼3Cover image▼uhttp://assets.c- | |ambridge.org/97805215/16846/co- | |ver/9780521516846.jpg 998| |▼aPUL
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