HEA|  |02547cam a2200349 a 4500
001|  |022009000525
003|  |CAL
005|  |20080513092243.4
008|  |060918s2007    enka     b    001 0 eng  
010|  |▼a  2006030740
020|  |▼a9780470013601 (hbk.)
020|  |▼a0470013605 (hbk.)
040|  |▼aDLC▼cDLC▼dBAKER▼dUKM▼dYDXCP▼-
   |  |dC#P▼dBTCTA▼dSDB▼dDLC▼dHST
050|00|▼aTK7871.15.F5▼bD54 2007
082|00|▼a621.381▼222
093|  |▼aTN4▼24
093|  |▼aTM215.3▼24
099|  |▼aCAL 022007135444
245|00|▼aDielectric films for advance-
   |  |d microelectronics /▼cedited b-
   |  |y Mikhail Baklanov, Martin Gre-
   |  |en, and Karen Maex.
260|  |▼aChichester, England ;▼aHobok-
   |  |en, NJ :▼bJohn Wiley & Sons,▼cc2007.
300|  |▼axxii, 486 p. :▼bill. ;▼c26 cm.
440| 0|▼aWiley series in materials fo-
   |  |r electronic and optoelectroni-
   |  |c applications
504|  |▼aIncludes bibliographical ref-
   |  |erences and index.
505|00|▼tLow and ultralow dielectric -
   |  |constant films prepared by pla-
   |  |sma-enhanced chemical vapor de-
   |  |position /▼rA. Grill －－▼tSpin－－
   |  |on dielectric materials /▼rGer-
   |  |aud Dubois, Robert D. Miller, -
   |  |Willi Volksen －－▼tPositron ann-
   |  |ihilation spectroscopy /▼rDavi-
   |  |d W. Gidley, Hua-Gen Peng, Ric-
   |  |hard Vallery －－▼tStructure cha-
   |  |racterization of nanoporous in-
   |  |terlevel dielectric thin films-
   |  | with x-ray and neutron radiat-
   |  |ion /▼rChristopher L. Soles ..-
   |  |. [et al.] －－▼tEllipsometric p-
   |  |orosimetry /▼rMikhail R. Bakla-
   |  |nov －－▼tMechanical and transpo-
   |  |rt properties of low-k dielect-
   |  |rics /▼rJ. L. Plawsky ... [et -
   |  |al.] －－▼tIntegration of low-k -
   |  |dielectric films in damascene -
   |  |processes /▼rR. J. O. M. Hoofm-
   |  |an ... [et al.] －－▼tONO struct-
   |  |ures and oxynitrides in modern-
   |  | microelectronics : material s-
   |  |cience, characterization and a-
   |  |pplication /▼rYakov Roizin, Vl-
   |  |adimir Gritsenko －－▼tMaterial -
   |  |engineering of high-k gate die-
   |  |lectrics /▼rAkira Toriumi, Koj-
   |  |i Kita －－▼tPhysical characteri-
   |  |zation of ultra-thin high-k di-
   |  |electric /▼rT. Conard, H. Bend-
   |  |er, W. Vandervorst －－▼tElectri-
   |  |cal characterization of advanc-
   |  |ed gate dielectrics /▼rRobin D-
   |  |egraeve ... [et al.] －－▼tInteg-
   |  |ration issues of high-k gate d-
   |  |ielectrics /▼rYasuo Nara －－▼tA-
   |  |nisotropic conductive film (AC-
   |  |F) for advanced microelectroni-
   |  |c interconnects /▼rYi Li, C. P. Wong.
650| 0|▼aDielectric films.
650| 0|▼aMicroelectronics▼xMaterials.
700|1 |▼aBaklanov, Mikhail.
700|1 |▼aGreen, Martin.
700|1 |▼aMaex, Karen.
856|41|▼3Table of contents only▼uhttp-
   |  |://www.loc.gov/catdir/toc/ecip-
   |  |071/2006030740.html
856|42|▼3Publisher description▼uhttp:-
   |  |//www.loc.gov/catdir/enhanceme-
   |  |nts/fy0739/2006030740-d.html
998|  |▼aHST

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